RT book
T1 Epitaxial Growth of Boron Carbide on 4H-SiC
A1 Benamra, Yamina
A1 Auvray, Laurent
A1 Andrieux, Jérôme
A1 Cauwet, François
A1 Alegre Salguero, María de la Paz
A1 Lloret, Laurent
A1 Araújo Gay, Daniel
A1 Gutiérrez Peinado, Marina
A1 Ferro, Gabriel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
K1 4H-SiC
K1 Boron carbide
K1 Heteroepitaxy
K1 CVD
AB In this work, the successful heteroepitaxial growth of boron carbide (BxC) on4H-SiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards this end,a two-step procedure was developed, involving the 4H-SiC substrate boridation under BCl3 precursorat 1200°C, followed by conventional CVD under BCl3 + C3H8 at 1600°C. Such a procedure allowedobtaining reproducibly monocrystalline (0001) oriented films of BxC with a step flow morphology ata growth rate of 1.9 µm/h. Without the boridation step, the layers are systematically polycrystalline.The study of the epitaxial growth mechanism shows that a monocrystalline BxC layer is formed afterboridation but covered with a B- and Si-containing amorphous layer. Upon heating up to 1600°C,under pure H2 atmosphere, the amorphous layer was converted into epitaxial BxC and transientsurface SiBx and Si crystallites. These crystallites disappear upon CVD growth.
PB Trans Tech Publications Ltd
SN 1662-9779
YR 2023
FD 2023
LK http://hdl.handle.net/10498/32569
UL http://hdl.handle.net/10498/32569
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 06-nov-2026