RT journal article
T1 Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity
A1 Márquez Navarro, Emilio José
A1 Blanco Ollero, Eduardo
A1 Manuel Delgado, José Manuel
A1 Ballester, M.
A1 García-Gurrea, M.
A1 Rodríguez-Tapiador, M.I.
A1 Fernández, S.M.
A1 Willomitzer, Florian
A1 Katsaggelos, Aggelos K.
A2 Física de la Materia Condensada
K1 optical properties
K1 thin films
K1 electron microscopy
K1 spectroscopic ellipsometry
K1 solar energy
AB Copper-nitride (Cu (Formula presented.) N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu (Formula presented.) N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu (Formula presented.) N thin film layers were studied by UV-MIR (0.2–40 (Formula presented.) m) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu (Formula presented.) N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, (Formula presented.), varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.
PB MDPI
SN 2079-6412
YR 2024
FD 2024
LK http://hdl.handle.net/10498/32622
UL http://hdl.handle.net/10498/32622
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-nov-2026