RT journal article
T1 Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3
A1 Ghasemi, Arsham
A1 Kepaptsoglou, Demie
A1 Galindo Riaño, Pedro Luis
A1 Ramasse, Quentin M.
A1 Hesjedal, Thorsten
A1 Lazarov, Vlado K.
A2 Ingeniería Informática
AB We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of ∼19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.
PB Nature Publishing Group
SN 1884-4057
YR 2017
FD 2017
LK http://hdl.handle.net/10498/33828
UL http://hdl.handle.net/10498/33828
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026