RT journal article
T1 Colloidal Silicon-Germanium Nanorod Heterostructures
A1 Lu, Xiaotang
A1 Mata Fernández, María de la
A1 Arbiol, Jordi
A1 Korgel, Brian A.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To control the composition of the nanorods, it was also necessary to limit an undesired side reaction between the Ge reaction byproduct tetraphenylgermane and trisilane. High-resolution transmission electron microscopy reveals that the Si-Ge interfaces are epitaxial, which gives rise to a significant amount of bond strain resulting in interfacial misfit dislocations that nucleate stacking faults in the nanorods.
PB American Chemical Society
SN 1520-5002
YR 2017
FD 2017
LK http://hdl.handle.net/10498/33898
UL http://hdl.handle.net/10498/33898
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026