RT journal article
T1 (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
A1 Jiménez Ríos, Juan Jesús
A1 Manuel Delgado, José Manuel
A1 Aseev, Pavel
A1 Soto-Rodríguez, P.E.D.
A1 Nötzel, Richard
A1 Gacevic, Z.
A1 Calleja, Enrique
A1 García Roja, Rafael
A1 Morales Sánchez, Francisco Miguel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física de la Materia Condensada
AB The main results of a complete study by Transmission and Scanning-Transmission Electron Microscopies ((S)TEM) are described for (i) InGaN/Si (111) heterostructures in the whole compositional range of the alloys, and (ii) InN quantum dots (InN QDs) directly grown on Si wafers or on relatively rough InGaN/Si (111) templates. The combination of many (S)TEM-based techniques allowed to evaluate differentcharacteristics of the systems under study: (InN QD/) InGaN/Si and InN QD/Si interfaces and crystal qualities, structural and chemical imperfections and other important features. InxGa1-xN thin films are often identified as single-crystalline, very homogeneous in composition, and mostly wurtzite-type, remarkably at any value of x.Also, (S)TEM techniques revealed that the InN nanostructures were hexagonal single crystals, mostly epitaxial to the supporting lattice. The InN crystals also exhibited partially cubic arrangements when allocated onto In-rich InxGa1-xN (i.e. x > 0.7).
PB Elsevier
SN 0925-8388
YR 2019
FD 2019
LK http://hdl.handle.net/10498/34408
UL http://hdl.handle.net/10498/34408
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-nov-2026