RT journal article
T1 Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
A1 Al Alam, Elias
A1 Cortes Mayol, Ignacio
A1 Besland, Marie-Paule
A1 Goullet, Antoine
A1 Lajaunie, Luc Cyrille Jacques
A1 Regreny, Philippe
A1 Cordier, Yves
A1 Cordier, Julien
A1 Cazarré, A.
A1 Isoird, K.
A1 Sarrabayrouse, Gérard
A1 Morancho, Frédéric
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB In this work, SiO2/GaN MOS structures have been fabricated using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) for deposition of silicon dioxide (SiO2) at low temperature (300 °C) on N-type, NID and P-type GaN epitaxial layers. Surface preparation involving chemical, UV-Ozone oxidation and oxygen plasma oxidation have been investigated by XPS analysis of the GaN surfaces prior to SiO2 deposition. The association of UV ozone and plasma oxidation allows a complete removal of carbon contamination and has a huge beneficial effect on the quality of the SiO2/GaN interface. Electrical C-V characterizations put into evidence the improved quality of the SiO2/GaN interface with a low interface trap density of 1010 cm−2 eV−1. The advantage of this soft interface treatment is thus specially observed for the N-type samples without annealing step, whereas improvements are still needed in the case of NID and P-type samples.
SN 1089-7550
YR 2011
FD 2011
LK http://hdl.handle.net/10498/34624
UL http://hdl.handle.net/10498/34624
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 07-nov-2026