RT journal article
T1 Comprehensive nanoscopic analysis of tungsten carbide/Oxygenateddiamond contacts for Schottky barrier diodes
A1 Piñero Charlo, José Carlos
A1 Alba Muñoz, Gonzalo
A1 Villar Castro, María del Pilar
A1 Alcántara Puerto, Rodrigo
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
A2 Química Física
K1 Diamond Schottky contact
K1 WC/diamond interface
K1 Schottky barrier height estimation
AB Tungsten carbide (WC) contacts deposited on oxygenated diamond surface have shown great importance in the field of diamond-based Schottky diodes. In previous works, high temperature stability up to 600 K, an ideality factor close to 1 with a Schottky Barrier Height (SBH) of ~1.5 eV have been demonstrated by electrical measurements. Annealing at higher temperature lead to the deterioration of the contact behaviour in terms of SBH and ideality factor. The reaction between deposited material and diamond or the desorption of oxygen at the interface has been tentatively linked to this phenomenon. In this work, the composition of the WC/O-diamond interfaces annealed at 600 K are analysed by X-ray photoelectron spectroscopy (XPS) depth profile with low energy Ar+ ion sputtering for the first time. The microstructure of the contact is analysed by high-resolution transmission electron microscopy (HR-TEM). The formation of a metastable cubic-WC phase at the interface and the presence of interface oxygen is evidenced. The SBH of the WC/O-diamond contact is estimated by XPS at 1.6 ± 0.2 eV in agreement with I/V measurements.
SN 0169-4332
YR 2020
FD 2020-09-19
LK http://hdl.handle.net/10498/34758
UL http://hdl.handle.net/10498/34758
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-nov-2026