RT journal article
T1 A Rad-hard On-chip CMOS Charge Detector with High Dynamic Range
A1 Sáenz Noval, Jorge Johanny
A1 Leñero Bardallo, Juan Antonio
A1 Carmona Galán, Ricardo
A1 Cervera Gontard, Lionel
A2 Física de la Materia Condensada
A2 Ingeniería en AutomáticaElectrónica, Arquitectura y Redes de Computadores
AB This article introduces a CMOS charge detectortailored for measuring ionizing radiation in a wide range offluences. It represents an entirely ON-chip solution basedon capacitive sensing. It was fabricated using a standard0.18-μm CMOS process and employs metal–insulator–metal(MiM) capacitor arrays to attain high matching, low leakage,and minimal process variations. The sensing area wasrad-hardened with a post-CMOS layer of metal deposited witha focus ion beam (FIB) that removes the use of external metallicplates. Experimental testing under the electron beam of ascanning electron microscope (SEM) demonstrated radiationhardness at energies up to 10 keV, with a very high dynamicrange (DR) of up to 138 dB (externally adjustable), and with asensitivity of 1.43 μV/e−. By harnessing the detection of relative charge variations instead of relying on absolute values,this approach proves highly suitable for particle event detection and facilitates future integrations compatible with theaddress event representation (AER) communication protocol.
PB IEEE
SN 1558-1748
YR 2023
FD 2023
LK http://hdl.handle.net/10498/34969
UL http://hdl.handle.net/10498/34969
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-may-2026