RT annotation
T1 HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications
A1 Baladés, Nuria
A1 Herrera, Miriam
A1 Sales, D.L
A1 Fernández, Natalia
A1 Delgado, FJ
A1 Hernández-Maldonado, D
A1 Ramasse, Q
A1 González, M
A1 Tomasulo, S
A1 Abell, J
A1 Walters, R
A1 Molina, SI
A2 Ingeniería Industrial e Ingeniería Civil
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB In this communication, we analyse by transmission electron microscopy (TEM) the structural properties ofan InAlAsSb/InGaAs/InP heterostructures grown by Molecular Beam Epitaxy (MBE). The photoluminescence emission of the samples grown at different temperatures shows the presence of subbandgap tail of states, suggesting the presence of compositional alloy variations in the quaternaryInAlAsSb material.
SN 1435-8115
YR 2016
FD 2016
LK http://hdl.handle.net/10498/35176
UL http://hdl.handle.net/10498/35176
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-may-2026