RT journal article
T1 Effect of annealing on the compositional modulation of InAlAsSb
A1 Baladés Ruiz, Nuria
A1 Sales Lérida, David
A1 Herrera Collado, Miriam
A1 Delgado González, Francisco Javier
A1 González, M
A1 Clark, k
A1 Pinsunkajana, P
A1 Hoven, n
A1 Hubbard, S
A1 Tomasulo, S
A1 Walters, JR
A1 Molina Rubio, Sergio Ignacio
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Ingeniería Industrial e Ingeniería Civil
AB The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM).1 This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence measurements revealed deviations from their predicted bandgap, suggestingnon-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed atdifferent temperatures and times. The effect on the structure of the InAlAsSb active layer caused by thenew arrangement of layers and the post-growth annealing treatments has been reported. Our resultsshow that the small compositional fluctuations of the as-grown heterostructures disappear after beingannealed, and the bandgap energy correspondingly increases towards the predicted value.
SN 0169-4332
YR 2017
FD 2017
LK http://hdl.handle.net/10498/35177
UL http://hdl.handle.net/10498/35177
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 07-nov-2026