RT conference output
T1 Structural Quality of GaSb/GaAs Quantum Dots for Solar Cells Analyzed by Electron Microscopy Techniques
A1 Fernández Delgado, Natalia
A1 Herrera Collado, Miriam
A1 Baladés Ruiz, Nuria
A1 James, JS
A1 Krier, A
A1 Fujita, H
A1 Molina Rubio, Sergio Ignacio
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Ingeniería Industrial e Ingeniería Civil
AB In this communication, we have studied by transmission electron microscopy (TEM) the structuralproperties of a heterostructure of layers of GaSb QDs for solar cell applications. The sample has beengrown by molecular beam epitaxy (MBE) on a GaAs substrate. Initially, we have analysed the sample bydiffraction contrast 220 BF, strain contrasts due to the 3D geometry of the QDs are observed.
SN 1435-8115
YR 2016
FD 2016
LK http://hdl.handle.net/10498/35179
UL http://hdl.handle.net/10498/35179
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026