RT journal article
T1 Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study
A1 Piñero Charlo, José Carlos
A1 Fernández de los Reyes, Daniel
A1 Lloret Vieira, Fernando Manuel
A1 Le Van-Jodin, L.
A1 Chretien, J.
A1 Masante, C.
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
A2 Física Aplicada
K1 Diamond
K1 Smartcut
K1 Thin film
K1 Ion implantation
K1 Amorphization
AB An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. As this process involves H+ implantation, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. So, the identification of a window of parameters that allows to induce controlled blistering is a critical bottleneck towards a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments that were used to evaluate the goodness of a new approach for the Smart-Cut process. Indeed, a window of parameters where graphite nano-layers are formed on the implanted region is identified.
PB Elsevier
SN 0169-4332
YR 2024
FD 2024-10-19
LK http://hdl.handle.net/10498/35551
UL http://hdl.handle.net/10498/35551
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026