RT journal article
T1 FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier
A1 Valendolf Nunes, Jackeline
A1 Leinen, D.
A1 Alba Muñoz, Gonzalo
A1 Lloret Vieira, Fernando Manuel
A1 Piñero Charlo, José Carlos
A1 Suzuki, Mariko
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
A2 Física Aplicada
K1 Diamond
K1 EBID
K1 Schottky barrier height
K1 Surface treatment
K1 XPS
AB Among diamond-based devices, the Schottky barrier diode (SBD) shows significant promise, achieving high breakdown voltages (9.5 MV⋅cm ) and reduced serial resistance (1 Ω) through structural advancements. The performance of SBDs depends on the interface between the Schottky contact, surface termination, and diamond. Studies have highlighted the impact of interface configuration on Schottky barrier height (SBH), particularly for hydrogen (H) and oxygen (O)-terminated diamonds. H-terminated surfaces exhibit negative electron affinity (NEA), whereas O-terminated surfaces show positive electron affinity (PEA). This surface behaviour has a strong impact on electron affinity, surface conductivity, work function, and the SBH which are critical for device performance. To know more about the metal-surface-diamond interface, tungsten (W) and platinum (Pt) deposited by electron beam-induced deposition (EBID), in a FIB dual beam, were employed as Schottky contacts on H and O-terminated diamond. The resulting structure has a pseudo vertical configuration with a back ohmic contact on a p ++ boron-doped layer. The current–voltage (I-V) and X-ray photoelectron spectroscopy (XPS) measurements resulted in a SBH of 1.69 eV for W and 1.76 eV for Pt, with an ideal factor (n) of 1.22 and 1.18, respectively. These n values demonstrated a chemical reactivity between metal-surface-diamond. Finally, a combination of two techniques for the SBH estimation is discussed.
PB Elsevier
SN 0169-4332
YR 2024
FD 2024-08-31
LK http://hdl.handle.net/10498/35556
UL http://hdl.handle.net/10498/35556
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026