RT journal article
T1 Ohmic contacts on (111)-oriented phosphorus-doped diamond fabricated by FIB transformation and surface Ga+ implantation
A1 Mesas Peña, Gabriel
A1 Lloret Vieira, Fernando Manuel
A1 Freire de Rivas, Antonio
A1 Millán Barba, Josué
A1 Alba Muñoz, Gonzalo
A1 Suzuki, M.
A1 Villar Castro, María del Pilar
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física Aplicada
A2 Ingeniería en AutomáticaElectrónica, Arquitectura y Redes de Computadores
K1 Electric contactors
K1 Electron devices
K1 Fabrication
K1 Gallium compounds
K1 Ion beams
K1 Phosphorus
K1 Semiconductor doping
AB Among the ultra-wide bandgap (UWBG) materials, diamond has unique properties for high power device applications and can deliver p-type and n-type doping. However, the achievement of low resistive ohmic contacts on n-type diamond limits the fabrication of bipolar devices. This study investigates the use of focused Ga+ion beam (FIB) to fabricate metal-free ohmic contacts on phosphorus-doped diamond, with a doping concentration of ∼5 × 1018 cm−3estimated by cathodoluminescence. FIB irradiation was used to locally modify the diamond surface, resulting in a conductive channel with ohmic, albeit highly resistive, behaviour. Using the circular Transfer Length Method (cTLM), a specific contact resistance of 4.3·104 Ω·cm2was obtained. This value is consistent with state-of-the-art results at similar doping levels, demonstrating that FIB is a viable and efficient technique for contact formation in diamond-based electronic devices.
PB Elsevier
SN 0925-9635
YR 2026
FD 2026-02
LK http://hdl.handle.net/10498/39171
UL http://hdl.handle.net/10498/39171
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 07-nov-2026