RT journal article
T1 Thickness-Driven Modulation of Electronic Transport in SnSe2-grown Films by Low-Temperature Atomic Layer Deposition
A1 Ruiz-Clavijo, Alejandra
A1 Bahrami, Amin
A1 Charvot, Jaroslav
A1 Lehmann, Sebastian
A1 Julin, Jaakko
A1 Wolf, Daniel
A1 Giebeler, Lars
A1 Wrzesińska Lashkova, Angelika
A1 Pieck, Fabian
A1 Outón Porras, Javier
A1 Tonner-Zech, Ralf
A1 Bureš, Filip
A1 Vaynzof, Yana
A1 Blanco Ollero, Eduardo
A1 Nielsch, Kornelius
A2 Física Aplicada
A2 Física de la Materia Condensada
K1 2D materials
K1 low temperature ALD
K1 SnSe2
K1 thin film
K1 transport properties
AB Low-temperature atomic layer deposition (ALD) is increasingly important for the integration of layered metal dichalcogenides such as tin diselenide (SnSe2) into advanced nanoelectronic devices, where compatibility with temperature-sensitive substrates and precise thickness control are essential. Using a novel and highly reactive selenium precursor, namely, bis(trimethylstannyl)selenide or Se(SnMe3)2, SnSe2 films are deposited at reduced temperatures. As-deposited films are initially amorphous, however, post-deposition annealing at 250°C induces crystallization. Structural analysis reveals a clear evolution in crystallinity: ultrathin films (∼25 nm) exhibit nearly single-crystalline, defect-free domains, while thicker films (∼100 nm) transition to a polycrystalline structure. This controlled variation in crystal quality directly influences the electronic transport properties, demonstrating the potential of low-temperature ALD combined with mild annealing for scalable fabrication of high-performance, thickness-engineered SnSe2-based devices.
PB John Wiley and Sons Inc
SN 2199-160X
YR 2026
FD 2026
LK http://hdl.handle.net/10498/39317
UL http://hdl.handle.net/10498/39317
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026