RT journal article
T1 Semi-empirical model for Impurity-to-Band energy reduction in semiconducting boron-doped diamond
A1 Alba Muñoz, Gonzalo
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Ingeniería en AutomáticaElectrónica, Arquitectura y Redes de Computadores
K1 boron doped diamond
K1 semiconducting diamond
K1 activation energy
K1 diamond for electronics
AB A semi-empirical analytical model which describes the reduction of impurity-to-band activation energy in boron-doped diamond, induced by doping and compensation levels. The model’s foundation mainly lies in the broadening of the impurity band. Crucially, compensation is integrated into this framework as a key multifaceted variable accounting for electrostatic disorder and impurity band occupancy. A two-stage optimization methodology is used for the comparative analysis with available experimental data. This model serves as a robust predictive framework for the electrical characterization and design of diamond-based semiconductor devices. The model’s predictions align closely with literature data, significantly outperforming previous theoretical frameworks by capturing the influence of compensation across the entire doping range.
PB Elsevier
SN 0925-9635
YR 2026
FD 2026-04-13
LK http://hdl.handle.net/10498/39421
UL http://hdl.handle.net/10498/39421
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 08-nov-2026