RT journal article
T1 Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages.
A1 Flores Gallegos, Sara
A1 Braza Blanco, María Verónica
A1 Fernández de los Reyes, Daniel
A1 Ben Fernández, Teresa
A1 Gallego Carro, Alejandro
A1 Schwarz, Malte
A1 Ulloa, Jose María
A1 González Robledo, David
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Growth interruptions
K1 Segregation
K1 III-Sb alloys
K1 STEM analyses
AB We present a quantitative analysis of Sb segregation in ultrathin GaAsSb films (1–20 ML) grown with soaking/ desorption methods. Sb soaking advances Sb incorporation almost to the beginning of the growth, increasing the compositional gradient for all thicknesses. Application of the desorption step alone increases the compositional gradient at the upper interface by removing a fixed amount of Sb but erases layers thinner than 10 ML. When both methods are combined, the Sb balance changes with layer thickness. Thinner layers lose Sb while thicker layers gain Sb. The amount of Sb desorbed is related to the floating layer content at the time of desorption, which varies with thickness. Segregation simulations show that the segregation energy changes during layer growth, being initially higher but stabilizing around the same value for all cases. Sb-soaked samples reach the segregation steady state at a distance of 5 ML from the origin, much earlier than non-soaked samples (10–15 ML). The effect of desorption produces a large perturbation of the segregation steady state, which is much greater in thedesorption-only sample than when combined with soaking. The combined effect of soaking and  esorption gives the best GaAsSb films with steeper interfaces and no delay in onset.
PB Elsevier
SN 1873-5584
YR 2023
FD 2023-10-14
LK http://hdl.handle.net/10498/40495
UL http://hdl.handle.net/10498/40495
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026