RT journal article
T1 Critical Strain Region Evaluation of Self-Assembled Semiconductor Quantum Dots
A1 Sales Lérida, David
A1 Pizarro Junquera, Joaquín
A1 Galindo Reaño, Pedro Luis
A1 García Roja, Rafael
A1 Trevisi, G.
A1 Frigeri, P
A1 Nasi, L
A1 Franchi, S.
A1 Molina Rubio, Sergio Ignacio
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Lenguajes y Sistemas Informáticos
K1 Molecular-Beam Epitaxy
K1 Transmission Electron-Microscopy
K1 Gaas
K1 Fields
K1 Layer
K1 Photoluminescence
K1 Distributions
K1 Operation
K1 Storage
K1 Ingaas
AB A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga) As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor devices
SN 0957-4484
YR 2007
FD 2007-01-01T00:00:00Z
LK http://hdl.handle.net/10498/7231
UL http://hdl.handle.net/10498/7231
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 07-nov-2026