TY  - GEN 
AU  - Araújo Gay, Daniel
AU  - Alegre Salguero, María de la Paz
AU  - Piñero Charlo, José Carlos
AU  - Fiori, Alexandre
AU  - Bustarret, Etienne
AU  - Jomard, F
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2013
SN  - 0003-6951
UR  - http://hdl.handle.net/10498/17158
AB  - To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be...
LA  - eng
KW  - HAADF
KW  - delta doped
KW  - boron cocentration
TI  - Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped  diamond layers
DO  - 10.1063/1.4816418
ER  -