TY  - GEN 
AU  - Alegre Salguero, María de la Paz
AU  - Araújo Gay, Daniel
AU  - Fiori, Alexandre
AU  - Piñero Charlo, José Carlos
AU  - Lloret Vieira, Fernando Manuel
AU  - Villar Castro, María del Pilar
AU  - Achatz, Philippe
AU  - Chicot, Gauthier
AU  - Bustarret, Etienne
AU  - Jomard, F
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2014
SN  - 0003-6951
UR  - http://hdl.handle.net/10498/17159
AB  - Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4
/H2 molar...
LA  - eng
KW  - Defect
KW  - synthetic diamond
KW  - CTEM
KW  - boron doped diamond
TI  - Critical boron-doping levels for generation of dislocations in synthetic diamond
DO  - 10.1063/1.4900741
ER  -