TY  - GEN 
AU  - Chicot, Gauthier
AU  - Fiori, A
AU  - Volpe, Pierre Nicola
AU  - Tran Thi, T.N.
AU  - Gerbedoen, J.C.
AU  - Bousquet, J
AU  - Alegre Salguero, María de la Paz
AU  - Piñero Charlo, José Carlos
AU  - Araújo Gay, Daniel
AU  - Jomard, F
AU  - Soltani, A
AU  - Morse, J
AU  - Härtwing, J
AU  - Tranchant, N
AU  - Mer-Calfati, C
AU  - Arnault, J. C.
AU  - Eon, D.
AU  - Omnés, F
AU  - Pernot, Julien
AU  - Bustarret, Etienne
AU  - Delahaye, J
AU  - Grenet, T
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2014
SN  - 0021-8979
UR  - http://hdl.handle.net/10498/17160
AB  - Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were...
LA  - eng
KW  - delta
KW  - doped diamond
KW  - electronic properties
TI  - Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures
DO  - 10.1063/1.4893186
ER  -