TY  - GEN 
AU  - Araújo Gay, Daniel
AU  - Alegre Salguero, María de la Paz
AU  - García, A.J.
AU  - Navas, J.
AU  - Villar Castro, María del Pilar
AU  - Bustarret, Etienne
AU  - Volpe, Pierre Nicola
AU  - Omnés, Franck
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2011
SN  - 0925-9635
UR  - http://hdl.handle.net/10498/17163
AB  - To assess diamond-based semiconducting devices, a reduction of point defect levels and an accurate control of doping are required as well as the control of layer thickness. Among the analyses required to improve such parameters, cross sectional...
LA  - eng
KW  - CL
KW  - Cross section analysis
KW  - TEM
KW  - doping
KW  - Diamond
TI  - Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
DO  - 10.1016/j.diamond.2011.01.044
ER  -