TY  - GEN 
AU  - Araújo Gay, Daniel
AU  - Alegre Salguero, María de la Paz
AU  - García, Antonio
AU  - Villar, Maria del Pilar
AU  - Bustarret, Etienne
AU  - Achatz, Philippe
AU  - Volpe, Pierre Nicola
AU  - Omnés, Franck
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2011
SN  - 1610-1642
UR  - http://hdl.handle.net/10498/17372
AB  - In some diamond-based semiconducting devices, large variations of doping level are required over short distances. Tools to determine doping level and defects distribution should therefore be developed. The present contribution shows the capabilities...
LA  - eng
KW  - homoepitaxial diamond, boron-doped, TEM, HAADF and CL
KW  - homoepitaxial diamond
KW  - boron-doped
KW  - TEM
KW  - HAADF and CL
TI  - Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers
DO  - 10.1002/pssc.201083991
ER  -