TY  - JOUR 
AU  - Piñero, Jose Carlos
AU  - Araújo Gay, Daniel
AU  - Traoré, A
AU  - Chicot, Gauthier
AU  - Maréchal, A
AU  - Muret, P
AU  - Alegre, Maria de la Paz
AU  - Villar, Maria del Pilar
AU  - Pernot, J
AU  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2014
SN  - 1862-6319
UR  - http://hdl.handle.net/10498/17373
AB  - Metal and oxide distribution in diamond metal–oxide–
semiconductor (MOS) structures are characterized using
several transmission electron microscopy (TEM) modes at
nanometric scale. To understand their electrical behavior,
oxygen distribution...
LA  - eng
KW  - diamond
KW  - oxide characterization
KW  - power device
KW  - schottky
KW  - TEM
TI  - Metal–oxide–diamond interface
investigation by TEM: Toward MOS and
Schottky power device behavior
DO  - 10.1002/pssa.201431178
ER  -