TY  - GEN 
AU  - Lloret Vieira, Fernando Manuel
AU  - Eon, D.
AU  - Donatini, F.
AU  - Araújo Gay, Daniel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Física Aplicada
PY  - 2021
SN  - 0003-6951
SN  - 1077-3118 (internet)
UR  - http://hdl.handle.net/10498/24510
AB  - Diamond lateral growth is a powerful technique for the design and fabrication of diamond-based power electronic devices. Growth orientation affects the diamond deposition in terms of growth rate, surface roughness, and impurity incorporation. It has...
LA  - eng
PB  - AMER INST PHYSICS
TI  - Selectively boron doped homoepitaxial diamond growth for power device applications
DO  - 10.1063/5.0031478
ER  -