TY  - GEN 
AU  - Araújo Gay, Daniel
AU  - Lloret Vieira, Fernando Manuel
AU  - Alba Muñoz, Gonzalo
AU  - Alegre Salguero, María de la Paz
AU  - Villar Castro, María del Pilar
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Física Aplicada
PY  - 2021
SN  - 0003-6951
SN  - 1077-3118 (internet)
UR  - http://hdl.handle.net/10498/24714
AB  - Doping diamond layers for electronic applications has become straightforward during the last two decades. However, dislocation generation in diamond during the microwave plasma enhanced chemical vapor deposition growth process is still not fully...
LA  - eng
PB  - AMER INST PHYSICS
TI  - Dislocation generation mechanisms in heavily boron-doped diamond epilayers
DO  - 10.1063/5.0031476
ER  -