TY  - GEN 
AU  - Ruiz Marín, Nazaret
AU  - Fernández de los Reyes, Daniel
AU  - Stanojevic, L.
AU  - Ben Fernández, Teresa
AU  - Braza Blanco, María Verónica
AU  - Gallego-Carro, A.
AU  - Barcena González, Guillermo
AU  - Ulloa, J.M.
AU  - González Robledo, David
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Ingeniería Informática
PY  - 2022
SN  - 0169-4332
UR  - http://hdl.handle.net/10498/25768
AB  - Recently, very thin AlAs capping layers (CLs) have been proposed as a useful tool to increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure of QDs after AlAs deposition remains poorly understood and the mechanisms to...
LA  - eng
PB  - ELSEVIER
KW  - (S)TEM
KW  - AlAs capping
KW  - InAs quantum dots
TI  - Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD
ER  -