TY  - GEN 
AU  - Helal, Hicham
AU  - Benamara, Zineb
AU  - Wederni, Mouhamed Amine
AU  - Mourad, Sabrine
AU  - Khirouni, Kamel
AU  - Monier, Guillaume
AU  - Robert-Goumet, Christine
AU  - Rabehi, Abdelaziz
AU  - Kacha, Arslane Hatem
AU  - Bakkali, Hicham
AU  - Cervera Gontard, Lionel
AU  - Domínguez de la Vega, Manuel
A4  - Física de la Materia Condensada
PY  - 2021
SN  - 1996-1944
UR  - http://hdl.handle.net/10498/25830
AB  - Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized
over a wide temperature range. As a result, the reverse current Iinv increments from 1 x 10^-7 A
at 80 K to about 1 x 10^-5 A at 420 K. The ideality factor n shows...
LA  - eng
PB  - MDPI
KW  - Conduction mechanisms
KW  - Schottky diode
KW  - GaN
KW  - n-GaAs
KW  - Nitridation
KW  - Barrier height
KW  - I-V-T
TI  - Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range
DO  - 10.3390/ma14205909
ER  -