TY  - GEN 
AU  - Soto Portillo, Beatriz
AU  - Cañas, J.
AU  - Villar Castro, María del Pilar
AU  - Araújo Gay, Daniel
AU  - Pernot, Julien
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2022
SN  - 0925-9635
UR  - http://hdl.handle.net/10498/25883
AB  - Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconium
dioxide deposited by atomic layer deposition at low temperature (100 ◦C). X-ray diffraction and transmission
electron microscopy evidence...
LA  - eng
PB  - ELSEVIER
KW  - Diamond
KW  - Oxygen termination
KW  - Zirconia
KW  - Capacitors
TI  - Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
DO  - 10.1016/j.diamond.2021.108745
ER  -