TY  - GEN 
AU  - Helal, Hicham
AU  - Benamara, Zineb
AU  - Comini, Elisabetta
AU  - Kacha, Arslane Hatem
AU  - Rabehi, Abdelaziz
AU  - Khirouni, Kamel
AU  - Monier, Guillaume
AU  - Robert-Goumet, Christine
AU  - Domínguez de la Vega, Manuel
A4  - Física de la Materia Condensada
PY  - 2022
SN  - 2190-5444
UR  - http://hdl.handle.net/10498/27468
AB  - In this paper, two Schottky structures of Au/n-GaAs (sample A) and Au/0.8 nm-GaN/n-GaAs (sample B) were fabricated and electrically characterized by current-voltage measurements at different temperatures. Two models, a classical one and another...
LA  - eng
PB  - SPRINGER
TI  - A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
DO  - 10.1140/epjp/s13360-022-02672-0
ER  -