TY  - GEN 
AU  - Ruiz Marín, Nazaret
AU  - Fernández de los Reyes, Daniel
AU  - Luna, Esperanza
AU  - Stanojevic, Lazar
AU  - Ben Fernández, Teresa
AU  - Flores Gallegos, Sara
AU  - Braza Blanco, María Verónica
AU  - Gallego-Carro, A.
AU  - Barcena González, Guillermo
AU  - Yañez Escolano, Andrés
AU  - Ulloa, José María
AU  - González Robledo, David
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Ingeniería Informática
PY  - 2022
SN  - 2079-4991
UR  - http://hdl.handle.net/10498/27919
AB  - The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during...
LA  - eng
PB  - MDPI
KW  - InAs QDs
KW  - AlAs capping
KW  - STEM
KW  - growth rate control
TI  - Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
DO  - 10.3390/nano12142504
ER  -