TY  - GEN 
AU  - Lloret Vieira, Fernando Manuel
AU  - Soto Portillo, Beatriz
AU  - Gutiérrez Peinado, Marina
AU  - Haenen, Ken
AU  - Araújo Gay, Daniel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Física Aplicada
PY  - 2023
SN  - 0925-9635
UR  - http://hdl.handle.net/10498/28025
AB  - Diamond n-type layers are crucial for the development of a new bipolar diamond-based electronic technology. However, the difficulties to incorporate impurity atoms into the diamond lattice make its growth a stage of technological research still in...
LA  - eng
PB  - ELSEVIER
KW  - P-doped
KW  - Diamond
KW  - TEM
KW  - MW PE CVD
KW  - N-type diamond
KW  - Defects
TI  - High phosphorous incorporation in (100)-oriented MP CVD diamond growth
DO  - 10.1016/j.diamond.2023.109746
ER  -