TY  - GEN 
AU  - Sun, Michael
AU  - Blasco, Rodrigo
AU  - Nwodo, Julian
AU  - Mata Fernández, María de la
AU  - Molina Rubio, Sergio Ignacio
AU  - Ajay, Akhil
AU  - Monroy, Eva
AU  - Valdueza-Felip, Sirona
AU  - Naranjo, Fernando B.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2022
SN  - 1996-1944
UR  - http://hdl.handle.net/10498/28831
AB  - AlxIn1-xN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via...
LA  - eng
PB  - MDPI
KW  - AlInN
KW  - Si(100)
KW  - Si(111)
KW  - radio-frequency sputtering
TI  - Comparison of the Material Quality of AlxIn1-xN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering
DO  - 10.3390/ma15207373
ER  -