TY  - GEN 
AU  - Soto Portillo, Beatriz
AU  - Couret, M.
AU  - Cañas Fernández, Jesús
AU  - Castelan, A.
AU  - Rouger, N.
AU  - Araújo Gay, Daniel
AU  - Villar Castro, María del Pilar
AU  - Pernot, J.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2023
SN  - 0925-9635
UR  - http://hdl.handle.net/10498/29431
AB  - Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a...
LA  - eng
PB  - Elsevier
KW  - D3MOSFET
KW  - Critical electric field
KW  - p-Channel
KW  - N-doping
KW  - Non-volatile photo switch
KW  - Threshold voltage control
KW  - O-terminated diamond
KW  - ZrO2
TI  - Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET
DO  - 10.1016/j.diamond.2023.109802
ER  -