TY  - GEN 
AU  - Alshahrani, Dhafer
AU  - Kesaria, Manoj
AU  - Jiménez Ríos, Juan Jesús
AU  - Kwan, Dominic
AU  - Srivastava, Vibha
AU  - Delmas, Marie
AU  - Morales Sánchez, Francisco Miguel
AU  - Liang, Baolai
AU  - Huffaker, Diana
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2023
SN  - 1944-8244
UR  - http://hdl.handle.net/10498/29600
AB  - Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the...
LA  - eng
PB  - ACS
KW  - atomic intermixing
KW  - band structure simulation
KW  - InAs/GaSb
KW  - InSb-like interface
KW  - photoluminescence
KW  - segregation
KW  - transmission electron microscopy
KW  - type-II superlattice
TI  - Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
DO  - 10.1021/acsami.2c19292
ER  -