TY  - GEN 
AU  - Piñero Charlo, José Carlos
AU  - Araújo Gay, Daniel
AU  - Fiori, Alexandre
AU  - Traoré, A
AU  - Villar Castro, María del Pilar
AU  - Eon, David
AU  - Muret, Pierre
AU  - Pernot, Julien
AU  - Teraji, Tokuyuki
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Didáctica
PY  - 2016
SN  - 0169-4332
UR  - http://hdl.handle.net/10498/30203
AB  - Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared andused for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky bar-rier heights and ideality factors of both...
LA  - eng
PB  - Elsevier
KW  - Diamond
KW  - Schottky
KW  - Oxygen-terminated
KW  - TEM
KW  - Power devices
TI  - Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
DO  - 10.1016/j.apsusc.2016.04.166
ER  -