TY  - GEN 
AU  - Piñero Charlo, José Carlos
AU  - Araújo Gay, Daniel
AU  - Enzo Pastore, Carlo
AU  - Gutiérrez Peinado, Marina
AU  - Frigeri, Cesare
AU  - Benali, Ahmad
AU  - Lelièvre, Jean François
AU  - Gendry, M.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Didáctica
PY  - 2016
UR  - http://hdl.handle.net/10498/30251
AB  - tTo integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach,to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution,NWs are grown on 111 oriented Si...
LA  - eng
PB  - Elsevier
KW  - Nanowires
KW  - Si/GaAs
KW  - Strain relaxation
KW  - TEM
TI  - Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
DO  - 10.1016/j.apsusc.2016.07.144
ER  -