TY  - GEN 
AU  - Cañas Fernández, Jesús
AU  - Piñero Charlo, José Carlos
AU  - Lloret Vieira, Fernando Manuel
AU  - Gutiérrez Peinado, Marina
AU  - Pham, Thu-Nhi
AU  - Pernot, Julien
AU  - Araújo Gay, Daniel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Didáctica
A4  - Física Aplicada
PY  - 2018
SN  - 0169-4332
UR  - http://hdl.handle.net/10498/30437
AB  - Alumina is a promising candidate for fabricating the gate of diamond metal oxide semiconductor field effect transistor (MOSFET) due to its outstanding nominal properties: A high gap of 8.8 eV and a high static dielectric constant of 9. However, such...
LA  - eng
PB  - Elsevier
TI  - Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
DO  - 10.1016/j.apsusc.2018.06.163
ER  -