TY  - GEN 
AU  - Piñero Charlo, José Carlos
AU  - Lloret Vieira, Fernando Manuel
AU  - Alegre Salguero, María de la Paz
AU  - Villar Castro, María del Pilar
AU  - Fiori, Alexandre
AU  - Bustarret, Etienne
AU  - Araújo Gay, Daniel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Didáctica
A4  - Física Aplicada
PY  - 2018
SN  - 0169-4332
UR  - http://hdl.handle.net/10498/30438
AB  - Ultimate spatial resolution in boron δ-doped homoepitaxial diamond interfaces has been achieved by diffraction contrast technique in Transmission Electron Microscopy. The combination of two reflections with the Howie-Whelan equations allows profiling...
LA  - eng
PB  - Elsevier
TI  - High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
DO  - 10.1016/J.APSUSC.2018.07.097
ER  -