TY  - GEN 
AU  - Lloret Vieira, Fernando Manuel
AU  - Araújo Gay, Daniel
AU  - Alegre Salguero, María de la Paz
AU  - González Leal, Juan María
AU  - Villar Castro, María del Pilar
AU  - Eon, David
AU  - Bustarret, Etienne
A4  - Física Aplicada
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2015
SN  - 1862-6319
SN  - 1862-6300
UR  - http://hdl.handle.net/10498/30522
AB  - Heavy boron-doping layer in diamond can be responsible for the generation of extended defects during the growth processes (Blank et al., Diam. Relat. Mater. 17, 1840 (2008)). As claimed recently (Alegre et al., Appl. Phys. Lett. 105, 173103 (2014)),...
LA  - eng
KW  - boron
KW  - chemical vapor deposition
KW  - defects
KW  - diamond
KW  - dopoing
KW  - transmission electron microscopy
TI  - TEM study of defects versus growth orientations in heavily boron-doped diamond
DO  - 10.1002/pssa.201532175
ER  -