TY  - GEN 
AU  - Lloret Vieira, Fernando Manuel
AU  - Araújo Gay, Daniel
AU  - Eon, David
AU  - Villar Castro, María del Pilar
AU  - González Leal, Juan María
AU  - Bustarret, Etienne
A4  - Física Aplicada
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2016
SN  - 1862-6319
SN  - 1862-6300
UR  - http://hdl.handle.net/10498/30523
AB  - Selective diamond growth on etched diamond substrates allows the development of 3D-type device geometries, which can make possible higher capacity, higher surface for contacts and benefits from better properties versus growth orientation. Such...
LA  - eng
KW  - diamond
KW  - etching
KW  - growth
KW  - methane
KW  - microwave plasma chemical vapor deposition (MPCVD)
KW  - substrates
TI  - Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates
DO  - 10.1002/PSSA.201600182
ER  -