TY  - GEN 
AU  - Cañas, Jesus
AU  - Alba Muñoz, Gonzalo
AU  - Leinen, Dietmar
AU  - Lloret Vieira, Fernando Manuel
AU  - Gutiérrez Peinado, Marina
AU  - Eon, David
AU  - Pernot, Julien
AU  - Gheeraert, Etienne
AU  - Araújo Gay, Daniel
A4  - Física Aplicada
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2021
SN  - 0169-4332
UR  - http://hdl.handle.net/10498/30525
AB  - γ-Alumina is a promising candidate for fabricating the gate of the diamond metal oxide semiconductor field effect transistor based on oxygen termination due to its high bandgap of 6.7 eV and high static dielectric constant of 9. Besides these...
LA  - eng
TI  - Diamond/γ-alumina band offset determination by XPS
DO  - 10.1016/J.APSUSC.2020.146301
ER  -