TY  - GEN 
AU  - Lloret Vieira, Fernando Manuel
AU  - Eon, David
AU  - Bustarret, Etienne
AU  - Fiori, Alexandre
AU  - Araújo Gay, Daniel
A4  - Física Aplicada
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Física Aplicada
PY  - 2018
SN  - 2079-4991
UR  - http://hdl.handle.net/10498/30531
AB  - Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for...
LA  - eng
TI  - Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
DO  - 10.3390/NANO8070480
ER  -