TY  - GEN 
AU  - Gutiérrez Peinado, Marina
AU  - Lloret Vieira, Fernando Manuel
AU  - Thanh-Toan, Pham
AU  - Cañas, Jesus
AU  - Fernández de los Reyes, Daniel
AU  - Eon, David
AU  - Pernot, Julien
AU  - Araújo Gay, Daniel
A4  - Física Aplicada
PY  - 2018
SN  - 2079-4991
UR  - http://hdl.handle.net/10498/30532
AB  - In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity...
LA  - eng
TI  - Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
DO  - 10.3390/NANO8080584
ER  -