TY  - GEN 
AU  - Lloret Vieira, Fernando Manuel
AU  - Piñero Charlo, José Carlos
AU  - Villar Castro, María del Pilar
AU  - Gheeraert, Etienne
AU  - Vo-Ha, A.
AU  - Soulière, Veronique
AU  - Rebaud, M
AU  - Carole, Davy
AU  - Ferro, Gabriel
A4  - Física Aplicada
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2014
SN  - 1862-6300
SN  - 1862-6319
UR  - http://hdl.handle.net/10498/30538
AB  - Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice...
LA  - eng
KW  - diamond
KW  - heteroepitaxy
KW  - SiC
KW  - TEM
KW  - VLS
TI  - Diamond as substrate for 3C-SiC growth: A TEM study
DO  - 10.1002/pssa.201431179
ER  -