TY  - GEN 
AU  - Ulloa, J. M.
AU  - LLorens, J.M.
AU  - Alén, B.
AU  - Fernández de los Reyes, Daniel
AU  - Sales Lérida, David
AU  - González Robledo, David
AU  - Hierro, A.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2012
SN  - 00036951
UR  - http://hdl.handle.net/10498/30806
AB  - The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs....
LA  - eng
KW  - Indium arsenide
KW  - Luminescence
KW  - Rapid thermal annealing
KW  - Semiconductor quantum dots
TI  - High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
DO  - 10.1063/1.4773008
ER  -