TY  - GEN 
AU  - Utrilla, A.D.
AU  - Fernández de los Reyes, Daniel
AU  - LLorens, J.M.
AU  - Artacho, I.
AU  - Ben Fernández, Teresa
AU  - González Robledo, David
AU  - Gacevic, Z.
AU  - Kurtz, A.
AU  - Guzman, A.
AU  - Hierro, A.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2017
SN  - 09270248
UR  - http://hdl.handle.net/10498/30854
AB  - This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment from type I to type...
LA  - eng
PB  - Elsevier
KW  - Capping layers
KW  - Carrier collection efficiency
KW  - GaAsSb
KW  - Quantum dots
KW  - Solar cells
KW  - Type-II
TI  - Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
DO  - 10.1016/j.solmat.2016.09.006
ER  -