TY  - GEN 
AU  - González Robledo, David
AU  - Fernández de los Reyes, Daniel
AU  - Utrilla, A.D.
AU  - Ben Fernández, Teresa
AU  - Braza Blanco, María Verónica
AU  - Guzman, A.
AU  - Hierro, A.
AU  - Ulloa, J.M.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2016
SN  - 09574484
SN  - 1361-6528
UR  - http://hdl.handle.net/10498/30856
AB  - The effect of the capping process on the morphology of InAs/GaAs quantum dots (QDs) by using different GaAs-based capping layers (CLs), ranging from strain reduction layers to strain compensating layers, has been studied by transmission microscopic...
LA  - eng
PB  - IOP Science
KW  - quantum dots, III–V semiconductors, transmission electron microscopy (TEM)
TI  - General route for the decomposition of InAs quantum dots during the capping process
DO  - 10.1088/0957-4484/27/12/125703
ER  -