TY  - GEN 
AU  - Ulloa, J.M.
AU  - Fernández de los Reyes, Daniel
AU  - Montes, M.
AU  - Yamamoto, K.
AU  - Sales Lérida, David
AU  - González Robledo, David
AU  - Guzman, A.
AU  - Hierro, A.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2012
SN  - 00036951
UR  - http://hdl.handle.net/10498/30858
AB  - The possibility of an independent tuning of the electron and hole confinement in InAs/GaAs quantum dots (QDs) by using a thin GaAsSbN capping layer (CL) is studied. By controlling the Sb and N contents in the quaternary alloy, the band structure of...
LA  - eng
PB  - American Institute of Physics
TI  - Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
DO  - 10.1063/1.3673563
ER  -