TY  - GEN 
AU  - Braza Blanco, María Verónica
AU  - Fernández de los Reyes, Daniel
AU  - Gonzalo, A.
AU  - Utrilla, A.D.
AU  - Ben Fernández, Teresa
AU  - Ulloa, J.M.
AU  - González Robledo, David
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2017
SN  - 19317573
UR  - http://hdl.handle.net/10498/30912
AB  - As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the...
LA  - eng
PB  - SPRINGER
KW  - Dilute nitride semiconductor
KW  - GaAsSbN
KW  - Structural and optical characterization
TI  - Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
DO  - 10.1186/s11671-017-2129-2
ER  -